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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD907 description high collector current good linearity of h fe high reliability wide area of safe operation applications audio amplifier series regulators general purpose power amplifiers absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i b b base current-continuous 1.5 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.56 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD907 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 80 v v (br)cbo collector-base breakdown voltage i c = 0.1ma; i e = 0 80 v v (br)ebo emitter-base breakdown voltage i e = 0.1ma; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.5a b 1.2 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 0.5a b 2.0 v i cbo collector cutoff current v cb = 80v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 7v; i c = 0 0.1 ma h fe dc current gain i c = 2a; v ce = 5v 40 switching times t on turn-on time 1.0 s t stg storage time 2.0 s t f fall time i c = 5a; i b1 = -i b2 = 0.5a r l = 5 ; p w =20 s; duty cycle 2% 1.0 s isc website www.iscsemi.cn 2 |
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